Ferroelectric BaTiO3 thin films on Ni metal tapes using NiO as buffer layer

YUAN, Z., Jinpeng Liu, J. WEAVER, Chonglin Chen, J. Jiang, Bin Lin, Victor Giurgiutiu, A. BHALLA, and Ruyan Guo. 2007. “Ferroelectric BaTiO3 Thin Films on Ni Metal Tapes Using NiO As Buffer Layer”. Applied Physics Letters 90 (20): 202901-1.

Abstract

Ferroelectric Ba Ti O <sub>3</sub> (BTO) thin films were deposited on NiO buffered polycrystalline Ni tapes by pulsed laser deposition. Microstructural studies by x-ray diffractometer and transmission electron microscopy reveal that the as-grown BTO films have the nanopillar structures with an average size of approximately 80 nm in diameter and the good interface structures with no interdiffusion or reaction. The dielectric and ferroelectric property measurements exhibit that the BTO films have a relatively large dielectric constant, a small dielectric loss, and an extremely large piezoelectric response with a symmetric hysteresis loop. These excellent properties indicate that the as-fabricated BTO films are promising for the development of the structural health monitoring systems.

Last updated on 05/14/2024